As much as 47 microW of cw infrared radiation and 89 microW of pulsed infrared radiation, tunable near 4.3 microm, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al(2)O(3) laser at 715 nm (pump wave) in AgGaS(2). The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.
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Simon et al. (1993) studied this question.
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