On the Electric Field Dependence of the Conductivity of Holes in Si at Low Temperatures 1. The Drift Velocity under Consideration of the Non‐Equipartition of Acoustic Phonon Energy

The field dependence of the drift pelocity of holes in Si is discussed within a non‐parabolic valence band model. Taking into consideration the non‐equipartition of acoustic phonon energy both in a field‐dependent distribution function and in the relaxation time of holes, a satisfactory description of the experimental drift velocity can be given at low temperatures in a wide field range.