We investigated the dependence of ZnO crystal plane on hydrogen sensing properties using Pt Schottky diodes on nonpolar m-plane ZnO (m-ZnO) and Zn-polar c-plane (0001) ZnO (c-ZnO) bulk substrates. Both of the Pt/ZnO Schottky diode sensors showed the increase in forward and reverse currents when exposed to hydrogen gas at room temperature. The maximum relative current change of m-ZnO diode sensor was measured to be 2748%, which was 3 times higher than that of the c-ZnO diode (844%). The current responses of both the Pt/ZnO diode sensors increased almost linearly with log of hydrogen concentrations. The Pt/m-ZnO Schottky diode showed promising results for the use in hydrogen gas detection at room temperature, possibly due to more active sites available on m-ZnO surface for hydrogen adsorption.
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Jang et al. (2019) studied this question.
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