Data are presented describing strained-layer distributed Bragg reflector (DBR) InGaAs/GaAs laser diodes operating at λ = 1083 nm with single transverse and longitudinal mode behaviour beyond 200 mW CW. The threshold current of these lasers is ~30mA, with a differential quantum efficiency of 65%. The total efficiency is 27% at an output power of 100 mW. The thermal and current tuning is ~0.8 Å/deg and 0.02–0.04 Å/mA, respectively.
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Major et al. (1993) studied this question.