Remote Coulomb scattering due to gate impurities in poly-Si gate is examined by considering the screening effect due to free carriers in the poly-Si gate. A physics-based screening model, which enables inclusion of the nonuniform carrier distribution in the poly-Si gate into the evaluation of remote Coulomb scattering with high accuracy, is proposed. Based on the proposed screening model, the effect of the nonuniform carrier distribution in the poly-Si gate on the mobility limited by remote Coulomb scattering, μRCS, is quantitatively examined. It is shown that the screening model using the averaged carrier distribution in the poly-Si gate cannot provide the correct description of the behavior of μRCS and the inclusion of the nonuniformity of the carrier distribution is essential for the quantitative evaluation of μRCS.
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Ishihara et al. (2007) studied this question.
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