The diagrams of GaAs tension in gallium, indium, bismuth, lead, and tin melts at T = 1073 K arc presented. It is shown that a peculiar feature of the dependences obtained is a decrease in the elastic modulus and the limits of elasticity, flow, and strength. The gallium and indium melts fragilify the crystals, while bismuth, tin, and lead melts plasticize them. Bismuth possesses the maximum plasticizing action and indium the maximum fragilifying one. It is suggested that the causes of such changes are associated with processes occurring at the liquid-solid phase interface in the nonequilibrium conditions. Correlation is found between changes in the mechanical properties of metals under the action of melts, on the one hand, and the difference between the electronegativity of contacting elements capable of forming rather strong bonds between themselves, on the other. A comparative estimate of cracks in gallium and indium in deformed samples is given. The influence of zinc, aluminium, and indium additives on the deformation of gallium arsenide in the gallium melt is considered. The action of microinclusions of solution-melts as adsorptionally active media inside tensile-stressed crystals-epitaxial structures is discussed.
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Gorodnichenko et al. (1985) studied this question.