High-Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method

High-power operation of a large-optical-cavity (LOC) AlGaAs laser diode with a ridge waveguide buried in a ZnSxSe1-x (x=0.06) layer has been achieved. In order to produce a reliable high-power laser, we have developed the growth of a lattice-matched ZnSxSe1-x (x=0.06) layer by adduct-source metalorganic chemical vapor deposition (MOCVD) and a self-aligned fabrication process by a reactive ion beam etching (RIBE) method for the etching of ZnSxSe1-x. An extremely stable transverse mode operation of up to 100 mW is obtained with a low threshold current of 30 mA at an oscillation wavelength of 780 nm.