Frequency dispersion of sidegating transconductance of GaAs junction field-effect transistors

The complex low-frequency sidegating transconductance of GaAs enhancement-mode junction field-effect transistors exhibits dc bias-dependent resonance and relaxation characteristics. These are attributed to the dynamic balance between emission and trapping of electrons by deep energy levels with activation energies of 0.5 and 0.7 eV located at the surface or within the semi-insulating GaAs substrate.