Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealing

The enhanced overpressure proximity technique has been applied to the formation of p-GaAs layers using capless rapid thermal annealing of GaAs implanted with Mg+. Carrier concentrations in excess of 1×1019 cm−3 and excellent hole mobilities have been achieved without a dielectric encapsulant using this annealing method. Implants were performed at 200 or 320 keV with doses of 1×1014 cm−2 or 1×1015 cm−2. Hall measurements have yielded electrical activations as high as 86% and 38% for the low and high dose samples, respectively. Capacitance-voltage measurements on implanted samples indicate that this annealing technique can be used to control the doping profile for use in the fabrication of devices requiring p-n junctions.