As-implanted and redistributed annealed depth distributions, range-energy data, and shape factors for Cr implanted into crystalline GaAs and Si

Depth distributions, range-energy curves, and the Pearson IV moments are given for Cr implantation into crystalline GaAs and Si as a function of ion energy from 40 to 600 keV at 4×1013 cm−2 fluence, and as a function of ion fluence from 4×1012 to 2×1016 cm−2 at 300-keV ion energy. The nature of the redistribution of these Cr profiles upon annealing at 840 °C for 20 min in both GaAs and in Si are shown and agree qualitatively in the two materials. Two general types of redistribution occur for 4×1013 cm−2 fluence, one for ion energies below and one for energies above about 100 keV.