Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect.