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Zn diffusion induced disordering of a GaAlAs-GaAs multiquantum-well (MQW) structure has been studied by cross sectional transmission electron microscopy. The disordering is found to occur uniformly along the lateral direction within a transition region of about 0.2 µm. The narrow width of the transition region is explained by the steep Zn concentration gradient of the diffusion front.
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Ishida et al. (1985) studied this question.
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