High dose oxygen implantation was used to form high resistivity regions in p-type Al0.2Ga0.8As. By achieving oxygen concentrations 30 times the grown-in beryllium concentration we created Al0.2Ga0.8As layers with a sheet resistance of over 1010 Ω/⧠ that were stable to 900 °C. Samples implanted with a base dose of 2×1014 cm−2 showed an apparent activation energy for conduction of 0.67 eV after annealing at 800 °C.
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Zolper et al. (1993) studied this question.