Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access Memory Applications

In the present paper we report a comparative study of the structural, morphologic, and electric properties of Pb(Zr,Ti)O 3 films, deposited by pulsed metal-organic chemical vapour deposition (MOCVD), on different (111)-oriented bottom-electrode stacks (SrRuO 3 /Pt, Pt, and Ir substrates). The Pb input ratio in the MOCVD chamber was systematically modified for each deposition run to obtain PZT films with various compositions within the Pb process window. Our results clearly demonstrate that only PZT films deposited on SrRuO 3 show high quality and reproducible properties throughout the process window, i.e., high (111) texture, low roughness (<5 nm), high P r (∼40 µC/cm 2 ), low V c (<1 V), as well as a relatively low leakage current (∼10 -5 A/cm 2 at 1.5 V). This study provides further evidence that SrRuO 3 /Pt substrates are good candidates for integration in next-generation high-density ferroelectric random access memories (FeRAM).