Preparation of Orientation-Controlled Polycrystalline Pb(Zr, Ti)O3Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties

2.0-µm-thick Pb(Zr x Ti 1- x )O 3 (PZT) films were grown with the deposition rate of 1.5 µm/h on (111)Pt/TiO 2 /SiO 2 /Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). Moreover, their electrical properties were investigated as a function of the film thickness and the Zr/(Zr+Ti) ratio, x . The deposited films were preferentially (001)- and/or (100)-oriented regardless of x in the film. When the film thickness increased from 0.12 to 3.5 µm, the dielectric constant measured at room temperature increased from 500 to 1050 for Pb(Zr 0.6 Ti 0.4 )O 3 , while it maintained an almost constant value of 500 for Pb(Zr 0.35 Ti 0.65 )O 3 . Well-saturated P – E hysteresis loops were observed irrespective of x . Remanent polarization value was almost constant and was above 30 µC/cm 2 in the film thickness range of 0.05 to 3.5 µm. On the other hand, the coercive field decreased monotonically with increasing film thickness and at about 2.0 µm thickness, it attained an almost constant value equivalent to the reported value for the PZT bulk ceramics.