The electron states of copper-decorated twinned boundaries in n- and p-type silicon bicrystals are investigated by deep-level transient spectroscopy. A correlation is established with the precipitate microstructures obtained under different conditions of copper precipitation. The analysis of the data supports a model for the trapping effects of the precipitates, regarded as metallic inclusions in rectifying contact with the silicon matrix.
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Broniatowski et al. (1990) studied this question.
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