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Solid-state monolithic-type X-ray detectors were fabricated by preparing amorphous silicon photodiodes monolithically on a Gd2O2S ceramic scintillator. The X-ray detection sensitivity of the solid-state detectors was comparable to that of a xenon ionization detector. It could be improved by optimizing the amorphous silicon photodiode and the intermediate materials between the photodiodes and the scintillator. The performance of the X-ray detector did not deteriorate even after 500,000-roentgen irradiation.
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Itoh et al. (1989) studied this question.
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