Surface structure of obliquely deposited layers and liquid crystal alignment

The dependence of the orientational action of obliquely deposited SiOx layers on the deposition angle and the residual gas pressure has been investigated. The variation of the pressure gave rise to a modification of the general dependence of the pretilt angle of liquid crystals on the deposition angle. A model has been developed which explains the action of all deposition parameters on the orientational behaviour of liquid crystals. In a first step, some tendencies of the layer formation are stated. Thereby, in a second step, it is possible to explain the change in the orientation at variations of deposition parameters using the knowledge of these tendencies and experimentally stated informations on the relative change of layer parameters.