Current switching and instability in a multibarrier heterostructure GaAs/Al0.45Ga0.55As diode is studied by Monte Carlo particle technique. It is found that interband impact ionization plays an important part in the phenomena considered. Current switching and instability originate from electron tunneling across the heterointerface nearest to the cathode with the subsequent impact ionization. Tunneling across the remaining heterointerfaces is of no importance in the diode operation under an instability regime.
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A. Reklaǐtis (1996) studied this question.
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