Velocity-field characteristics of III-V semiconductor alloys: Band structure influences

We have calculated the velocity-field characteristics of semiconductor alloys based on realistic band structures and have obtained the band structures and alloy-scattering rates from a generalization of the coherent potential approximation method. Although we use proper band structures, we still consider a single electron-temperature model. The results agree surprisingly well with experiments, and suggest that InP-based alloys are good candidates for high-speed devices.