Diffusion in Silicon. II. Enhanced Diffusion of Phosphorus in Silicon

It has recently been reported that the enhancement of the rate of diffusion of phosphorus in silicon in the high concentration range is substantially reduced when the surface concentration is increased beyond a critical value. In this paper it is shown that this effect is consistent with a model which explains the anomalous diffusion by the generation of excess vacancies from edge jogs during the glide of diffusion-induced dislocations into the crystal.