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N-type WO3 and p-type Si can be assembled into a composite structure called “Z-scheme,” which is a high efficiency model for overall water splitting. However, due to the existence of Schottky barrier, its relatively low photocurrent density is still a great challenge for application. Here, a modified “Z-scheme” structure by inserting a W interlayer is presented. A great enhancement of photocurrent density over 10 times is achieved, which can be ascribed to the introduction of the ohmic contacts between W interlayer with both WO3 and Si layers and the elimination of Si-O bands at the interface.
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Xing et al. (2014) studied this question.
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