Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {δ}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.
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Bo E. Sernelius (1989) studied this question.
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