The design and fabrication of a 1.3- mu m waveguide-coupled strained-layer In/sub x/Ga/sub 1-x/As/GaAs MSM detector with an optimized active layer thickness is reported. For 100- mu m-long devices, a responsivity of 0.58 mA/mW is observed. Using the detector as an optoelectronic switch, on/off ratios better than 40 dB were achieved at L and X band.>
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Ng et al. (1993) studied this question.
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