In-doped ZnO nanowires were successfully fabricated by thermal evaporation of a powder mixture of Zn, In 2 O 3, and graphite. Field emission of individual In-doped and pure ZnO nanowire was observed in situ by a transmission electron microscopy. The results show that In-doped ZnO nanowires showed an enhanced field emission properties. First-principle density functional calculations were performed to calculate the electronic structure of the In-doped and pure ZnO in order to explain the observed field emission properties. A two-band field emission mechanics was proposed to explain the enhanced field emission from n-type doping.
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Huang et al. (2007) studied this question.
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