Cu2O film based single sandwich structure with complementary resistive switching characteristics is demonstrated. Unlike the conventional complementary resistive switching devices, the Pt/Cu2O/fluorine doped tin oxide sandwich structure is fabricated without anti-serially bipolar resistive switching cells or interfacial layer. In addition, the forming-step is unnecessary to turn on the device, which makes the complementary resistive switching process easy to control. With high resistance ratio, stable retention and reproducible switching properties, this complementary resistive switching device can be used in three dimensional stacked crossbar memory arrays. The switching mechanism is also discussed by developing a conductive path model.
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Duan et al. (2016) studied this question.
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