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Resistivity inhomogeneities in single-crystal CdS have been studied as a function of sulfur (S2) annealing pressure. The number and severity of the inhomogeneities increase with the value of S2 partial pressure and are believed to be responsible for the deterioration of ultrasonic gain in crystals annealed at pressures much above a critical pressure.
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Parsons et al. (1967) studied this question.
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