Significant investments and R&D efforts over the past two decades have established GaAs and InP electronic device technologies from substrate manufacturing to MMIC amplifier design and testing. Today, GaAs and InP HBTs and HFETs, as far as gain, efficiency, and power are concerned, dominate the whole spectrum from S- to W-band and beyond. In this paper we discuss recent advances in device technologies and survey the state of the art performance of GaAs and InP HFETs and HBTs.
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Nguyen et al. (2001) studied this question.
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