Controllable modification of transport properties of single-walled carbon nanotube field effect transistors with in situ Al decoration

We use an in situ Al decoration technique to control the transport characteristics of single-walled carbon nanotube field effect transistors (SWNT-FETs). Al nanoparticle decoration in a high vacuum caused the devices to change from p-type to n-type FETs, and subsequent exposure to the ambient atmosphere induced a gradual recovery of p-type character. In comparison with the bare SWNT-FETs under high vacuum, the channel-open devices with decorated Al particles exhibited reduced current under ambient conditions. However, selective Al decoration only at the contact resulted in an improved p-type current in ambient air.