The oxygen concentration in the ambient gas during liquid phase epitaxial growth processes was quantitatively analyzed. The oxygen influences the formation of defects such as saucer pits and so-called ’’dark spot defects’’ and the carrier concentration of grown layers. Reducing the oxygen concentration less than 0.03 ppm, the defect densities drastically decrease in GaAs grown layers.
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Ishii et al. (1976) studied this question.
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