The growth of thin oxide films on hafnium immersed in a 0.5N solution of H2SO4, NaOH, and Na2SO4 is studied without permitting an external current to flow. The results indicate the dependence of oxide capacitance on the pH of the electrolyte and surface treatments. Galvanostatic oxide film growth on hafnium has been studied in 0.5N H2SO4. The simple theory of anodization is applied, and data are given for electric field, reciprocal capacity, and prepolarization thickness.
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El‐Basiouny et al. (1980) studied this question.
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