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Ferroelectric 0.7Pb(Mg 1/3 Nb 2/3 )O 3 –0.3PbTiO 3 (PMN‐PT) thin films were deposited on ZrO 2 /SiO 2 /silicon substrates using a chemical‐solution‐deposition method. Using a thin PZT film as a seed layer for the PMN‐PT films, phase‐pure perovskite PMN‐PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in‐plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm 2 ) than for through‐the‐thickness polarized PMN‐PT thin films (10–12 μC/cm 2 ) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN‐PT thin films was ∼20 times higher than that of through‐the‐thickness polarized PMN‐PT thin films.
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Zhou et al. (2002) studied this question.
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