Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium–tin–oxide anodes

We report investigations of the electronic transport properties carried out by means of the Hall technique for indium–tin–oxide thin films on glass after a variety of surface treatments. We find that oxygen-plasma treatments induce a significant increase in the carrier concentration, and a less significant decrease of mobilities with respect to “as-received” or aquaregia treated substrates. We consider that this is indicative of an increased concentration of defects, as a result of the plasma exposure.