GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.
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Matsunaga et al. (2011) studied this question.
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