On the correlation of the charged centers in Al-thermal SiO2Si structures

The relationship of the electrical charges in Al–thermal SiO2Si structures is approached via a more detailed study of their dependence on processing conditions such as oxidation and annealing ambient. The distribution of the mobile ions, the deep ion traps at the AlSiO2 interface and the density of the fast states at the SiSiO2 interface are found to depend essentially on the presence of hydrogen in the low temperature annealing ambient. The sodium ions introduced into the oxide by some technological steps are found to accumulate at the SiSiO2 interface in a net neutral state during a subsequent low temperature anneal.