We developed a carbon-nanotube field-effect transistor (CNTFET), in which a gate electrode and a gate insulator are located on top of a semiconducting single-wall carbon nanotube channel on a Si/SiO2 substrate. The gate insulator is made of titanium dioxide and is 2–3 nm thick. The transconductance of this device at a drain voltage of 100 mV is 320 nS, which, due to the high dielectric constant and nanoscale thickness of the gate insulator, is higher than that of any back-gate and top-gate CNTFETs reported so far.
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Nihey et al. (2002) studied this question.
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