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The photo-assisted etching of heavily phosphorous-doped polycrystalline silicon by chlorine was studied using synchrotron radiation as an extreme ultraviolet (EUV) light source. The quantum yield for the removal of the Si atoms at a chlorine pressure of 0.3 Torr was found to be about 0.5% photon-1 using the Ti-filtered light, which is mostly in the EUV region, 1-20 nm. Formation of electronically excited Cl+ ions upon EUV irradiation was confirmed by emission spectroscopy. Negative bias applied to the Si crystal was found to increase the etch rate.
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Hayasaka et al. (1987) studied this question.
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