The partial photoionization cross section of In $4d$, Sn $4d$, Pb $5d$, and Bi $5d$ in different materials has been investigated in the photon energy range ω=20-60 eV. The experiment consisted of measuring the intensity ratio between the two spin-orbit components, R, as a function of ω. A large deviation of R from its statistical value of 1.5 has been found which exhibits a strong dependence on ω. The R vs ω dependence is quite similar in different materials and for different d core levels. Closer than {~} 6 eV to the photoionization threshold this dependence is mostly due to the rapid changes with ω of the partial atomic photoionization cross section σ. Further away from threshold the R-σ relation is more complicated, but atomic effects still prevail over solid-state effects.
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Margaritondo et al. (1979) studied this question.
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