Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP Heterostructures

strained‐layer heterostructures with a wide range of composition were prepared using atmospheric‐pressure organometallic vapor phase epitaxy. Composition of the layers was found to depend on both the TMIn partial pressure and the state of strain of the layer. Strained‐layer superlattices exhibited smooth surface morphologies and abrupt interfaces, as determined by x‐ray diffraction and high‐resolution electron microscopy. compositions as high as were obtained, corresponding to strain between the layers of 2.6%. Strained quantum well structures with compositions as high as were also grown and their structural properties were evaluated using photoluminescence (PL) spectroscopy. PL spectra indicated atomically smooth interfaces for structures with strains as high as 2.1%.