Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing

Interfacial properties of /n-type 3C-SiC structures fabricated by rapid thermal processing have been investigated for various oxidizing and annealing atmospheres. In this work, we show that the growth of films can be, at least, 1 order of magnitude faster than in a conventional furnace. Besides being fast, this technique provides oxide films with quality comparable to those grown in a classical furnace. Analyzing the depth profiles of N and C species in the films and the electrical properties of the oxides, we found that incorporating during the growth in or annealing under is not favorable for the improvement of the /3C-SiC interface. Instead, we demonstrated that combining the beneficial effect of oxide growth with the one of Ar anneal, the density of interface traps is reduced and leads to significantly improved oxide quality.