A New Two-Dimensional Silicon Oxidation Model

This paper describes a new two-dimensional silicon oxidation model taking into consideration the deformation of silicon. In the model based on the steady-state oxidant diffusion and viscoelastic deformation of the oxide, it is assumed that the oxide is composed of two layers during the deformation of the oxide. Simulated results on a LOCOS structure were obtained using the boundary element method (BEM). It is proved that the present model can analyze oxidation-induced stress in the silicon substrate, which is not explained by previous models, as well as predict the oxide shape.