Two-dimensional Pb islands of a few atomic layers are grown on the incommensurate Si(111)-Pb surface at low temperatures. Among them, two types of islands having different stacking with the substrate are observed. These islands, respectively, display an alternating image contrast with their thickness. Besides, the contrasts of the islands of different types are complementary to each other layer by layer. These intriguing behaviors do not show significant bias dependence throughout the range from -3 to +3 V and can be explained by the vertical charge oscillation with the growth of a new layer. The charge oscillation in the out-of-plane direction originates from electron scattering by the in-plane potential variation at the Pb/Si interface.
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Jian et al. (2003) studied this question.
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