Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector

Controllable and repeatable crystal imperfection modulation engineering (CIME) is important for the development of semiconductor science and technology. However, for wide band gap semiconductors (WBGSs), there still lacks universal and reliable CIME. Here, based on the general idea of chemical composition complete expression design, a well‐designed, repeatable, and feasible CIME for ZnO is introduced, making free modulation of carrier in WBGS become possible. Briefly, this extraordinary CIME is dominated by two innovative procedures: an electrochemical doping and a strong oxidizing atmosphere annealing. The proposed CIME is a repeatable and universal carrier modulation project, which holds technological promise for various WBGS‐based semiconductor devices. Benefiting from this CIME, an α particle detector which operating at a high electric field of 107 V cm−1 can be fabricated successfully.