We investigate the magnesium (Mg) incorporation efficiencies in Mg x Zn 1− x O films on c -plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality Mg x Zn 1− x O films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O 2 atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the Mg x Zn 1− x O films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content.
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Hu et al. (2017) studied this question.