2D bismuth/Ga2O3 van der Waals heterostructure for ultraviolet photodetectors with high responsivity and detectivity

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Gallium oxide (Ga 2 O 3 ), a promising candidate in ultraviolet photodetection, suffers significant limitations in its optoelectronic performance owing to the challenge of achieving p-type doping.To address this challenge, we designed a type-I heterostructure photodetector (PD) by depositing two-dimensional Bi films on Ga 2 O 3 using the pulsed laser deposition technique.Under the illumination intensity of 0.1 μW/cm 2 , this PD exhibits a remarkable responsivity of up to 200 mA/W and a detectivity of 8.58 × 10 11 Jones, demonstrating its excellent low-light detection ability.In addition, due to the built-in electric field of the heterojunction, the device can effectively suppress the dark current and has the performance of selfpowered detection.