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November 1, 1999physica status solidi (a)

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere

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Authors

SKS. Yu. KarpovVirginia State UniversityDZD. V. ZiminaYMYu.N. MakarovNational University of Science and Technology

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Karpov et al. (1999) studied this question.

synapsesocial.com/papers/6a91806ece47fdb2afb39cc0https://doi.org/10.1002/(sici)1521-396x(199911)176:1<435::aid-pssa435>3.0.co;2-m
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  1. 1Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum1979 · 113 citations
  2. 2Epitaxially grown AlN and its optical band gap1973 · 607 citations