X-ray-induced secondary-electron emission from solid xenon

The secondary-electron yield has been measured for solid Xe films excited by (1--10)-keV x rays. High yields are observed due to the long escape depth for secondary electrons ({~}1 {μ}m). The measurements are discussed in terms of a one-dimensional diffusion model. The electron escape depth is found to be sensitive to the temperature at which the film is grown. The electron yield was found to exhibit a time dependence due to the combined effects of charging and radiation damage. A large increase in the yield was observed when an electric field was applied. Finally, the effects of added impurities, CO₂ and propane, were investigated. It is demonstrated that solid Xe will be useful as a very sensitive x-ray photocathode.