15% efficiency (1 sun, air mass 1.5), large-area, 1.93 eV AlxGa1−xAs (x=0.37) n-p solar cell grown by metalorganic vapor phase epitaxy

1.93 eV AlxGa1−xAs (x=0.37) n-p solar cells with areas of 4 cm2 have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short-circuit current density of 12.0 mA/cm2, an open-circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high-quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.