Nanometer Modifications of Non-Conductive Materials Using Resist-Films by Atomic Force Microscopy

We demonstrate the nanolithography of a SiO2 substrate by modification of ultrathin films of nonconducting polymer using an atomic force microscope (AFM) followed by wet etching. Using an AFM tip under high normal forces of the order of 100 nN in air, and at a writing speed of 1 µm/s, large areas of 10 ×10 µm2 patterns with widths less than 28 nm and depths of 10 nm were reliably fabricated onto the SiO2 substrate.