We have studied the effect of a uniaxial stress on the long-wavelength optical phonons of InP using Raman and far-infrared spectroscopic techniques. The Raman measurements were performed with laser lines in regions of both transparency and opacity, using infrared and visible lasers, respectively. Phonon and effective-charge deformation potentials have been obtained from the data, and also an estimate of the Faust-Henry coefficient from the integrated scattering intensities. Comparison of the Raman and infrared reflectivity results allows us to conclude that the applied stress is relaxed toward the surface of the sample.
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Anastassakis et al. (1988) studied this question.
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